Paper
14 November 2002 Pressure sensor based on a microstructure with dual silicon nitride vibrating beams
Deyong Chen, Dafu Cui, Li Wang, Xiaotong Gao, Zhaoyan Fan
Author Affiliations +
Proceedings Volume 4935, Smart Structures, Devices, and Systems; (2002) https://doi.org/10.1117/12.469410
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia
Abstract
This paper describes a resonant pressure sensor of a new structure which comprises two beams supported by only two rectangular piers. Both beams can be thermally excited into resonant vibration, whose resonant frequencies are differentially modulated by pressure loads, and the value of the applied pressure can then be obtained by measuring the resonant frequency of each beam. With thick silicon rich SiN film of low residual stress as mechanical vibrating beams, the sensor is fabricated from a single crystal silicon wafer, using porous silicon as a sacrificial layer. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, design of diaphragm geometry, and sensitivity of pressure measurement. Simulation results show that the novel structure improves the thermal stability and pressure sensitivity.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyong Chen, Dafu Cui, Li Wang, Xiaotong Gao, and Zhaoyan Fan "Pressure sensor based on a microstructure with dual silicon nitride vibrating beams", Proc. SPIE 4935, Smart Structures, Devices, and Systems, (14 November 2002); https://doi.org/10.1117/12.469410
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KEYWORDS
Silicon

Sensors

Semiconducting wafers

Silicon films

Computer simulations

Temperature metrology

Finite element methods

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