Growth and optical storage properties of Ce:Tb:KNSBN crystals

Jun Wang; Zhonghua Zhang; Zibin Zhu; Rui Wang

doi:10.1117/12.483293

17 September 2002 Growth and optical storage properties of Ce:Tb:KNSBN crystals

Jun Wang, Zhonghua Zhang, Zibin Zhu, Rui Wang

Proceedings Volume 4930, Advanced Optical Storage Technology; (2002) https://doi.org/10.1117/12.483293
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Doping CeO₂ and Tb₄O₇ in KNSBN, the Ce:KNSBN crystal was grown. It is the first time that the crystal was grown by Czochalski. The phase conjugate reflectivity was measured to be the higher than 140% on transient state and to be higher than 90% on stable state. The out electric field can enhance the phase conjugate reflectivity on transient state. When E_O equals 4 kv/cm², the transient phase conjugate reflectivity R equals 168% and the stable transient phase conjugate reflectivity R equals 120%. Ce:Tb:KNSBN crystals pumping on self phase conjugate reflectivity goes up to 62%. Cu:KMSBN was used as recorder and Ce:Tb:KNSBN was used as self-pumped conjugate to realize holographic associative memory.

Citation Download Citation

Jun Wang, Zhonghua Zhang, Zibin Zhu, and Rui Wang "Growth and optical storage properties of Ce:Tb:KNSBN crystals", Proc. SPIE 4930, Advanced Optical Storage Technology, (17 September 2002); https://doi.org/10.1117/12.483293

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