Photo-emitters based on field and optically induced electron emission

Jadwiga Olesik

doi:10.1117/12.481043

29 August 2002 Photoemitters based on field and optically induced electron emission

Jadwiga Olesik

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481043
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Electron emission properties of doped In₂0₃ and Sn0₂ (ITO) thin layers have been studied. These layers have been deposited onto both surfaces of a microscope glass using a constant-current ion sputtering method. One of the layer (1 μm thick) was a field electrode and another one (1Onm - 200nm) was treated as an electron emitter. The layers were examined using an electron emission induced by electric field. The polarizing voltage U_pol has been applied to the field electrode. The studies has been carried out in vacuum (1O^-7 hPa). Electron emission yield dependence on the intensity of an internal field and illumination were measured. The exponential dependence of the pulse frequency n =f(U_pol) has been found. With increasing U_pol (field strength in a sample) and after illumination the count frequency of pulses grows monotonically. At low U_pol (≤|-500V|) the increase is linear. At higher U_pol this dependence is exponential. Energy analysis of emitted electrons was performed by the retarding field method. Measurements of electrons energy in field induced emission showed that about 80% of electrons have energy up to 10 eV. It was also found that additional effect at simultaneous emission oftwo electrons as result ofabsorption of a single photon have to be taken into account.

Citation Download Citation

Jadwiga Olesik "Photoemitters based on field and optically induced electron emission", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481043

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