PMJ 2002 Panel Discussion Review: Lithography strategy from 90- to 65-nm nodes -- ArF, F2, or EPL?

Hiroyoshi Tanabe; Yoshinori Nagaoka

doi:10.1117/12.467903

27 December 2002 PMJ 2002 Panel Discussion Review: Lithography Strategy from 90 to 65 nm Nodes: ArF, F₂, or EPL?

Hiroyoshi Tanabe, Yoshinori Nagaoka

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467903
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

We discussed the following topics at the panel discussion of Photomask Japan 2002. 1) Pushing the limit of ArF lithography: How far ArF lithography will extend? 2) Current status and issues for F₂lithography, 3) Current status and issues for EPL, 4) Current status and issues for F₂ and NGL masks, 5) Lithography tool selection from 90- to 65- nm nodes. ArF lithography could extend to 65-nm node by using alternating phase shift masks. F₂ lithography and EPL are not yet established and we need to solve many issues for practical applications. The choice of lithography tools in 65-nm node depends on devices and layers. Multiple lithography tools might be used in 65-nm node.

Citation Download Citation

Hiroyoshi Tanabe and Yoshinori Nagaoka "PMJ 2002 Panel Discussion Review: Lithography Strategy from 90 to 65 nm Nodes: ArF, F₂, or EPL?", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467903

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KEYWORDS

Lithography

Photomasks

Pellicles

Scanners

Mask making

Phase shifts

Transmittance

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