Paper
27 December 2002 Mask Error Enhancement-Factor (MEEF) metrology using automated scripts in CATS
Paul J. M. van Adrichem, Frank A. J. M. Driessen, Kees van Hasselt, Hans-Juergen Brueck
Author Affiliations +
Abstract
During the development of process generations with critical dimensions (CDs) around or even far below the wavelength used for printing, the wafer exposure step has become more and more complicated due to the non-linearities that occur within this sub-wavelength regime. These non-linearities give rise to a variety of optical-proximity effects (OPE) that must then be corrected for (optical-proximity correction, OPC). At the same time, the reticle errors are consuming a larger part of the total error budget on the wafer than we have seen in the past. As a consequence, detailed assessments of the reticle quality are gaining more importance and the average number of measurements for qualification of a high-end reticle is rapidly increasing. Within-die CD measurements are becoming common practice for such reticles. Quite often these measurement points are selected randomly. However, regions within the design with relatively low aerial-image contrast during imaging will be subject to the largest amplification of the mask-errors (highest Mask-Error-Enhancement Factor, MEEF). In this work a solution is presented in which measurement points with high MEEF-values can be selected from any given layout data. The method is embedded into the standard mask data preparation flow using CATS. Focus is on the automation necessary to generate set-up files for CD metrology tools, such as the Leica-MueTec M5k. The methodology has been applied in a CMOS volume production site.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul J. M. van Adrichem, Frank A. J. M. Driessen, Kees van Hasselt, and Hans-Juergen Brueck "Mask Error Enhancement-Factor (MEEF) metrology using automated scripts in CATS", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467755
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Cited by 3 scholarly publications.
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KEYWORDS
Reticles

Photomasks

Semiconducting wafers

Computed tomography

Critical dimension metrology

Optical proximity correction

Image processing

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