Paper
27 December 2002 Mask Blanks and Their (Sometimes Invisible) Defects
Author Affiliations +
Abstract
The ITRS roadmap for lithography aggressively shrinks many features on the mask from the critical dimension to the size of defect that must be eliminated. When a defect is larger than 30% of the minimum image size, it is considered detrimental to the mask performance. Unfortunately, the sensitivity of current inspection systems does not keep the pace dictated by ITRS for development work. The 65 nm node mask development teams are largely unaware of defects smaller than 90 nm. This gap only widens for NGL masks. The scarcity of high-sensitivity inspection systems is leaving many mask makers and their customers unsure of the impact, or even presence of, defects on the reticle. This paper will provide an analysis of mask blank defects using several different inspection systems with both low and high sensitivity levels. Defect sources from carriers and shipping will be explored. Finally, the likelihood of removing these particles once they have been lodged on the mask surface is discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emily Fisch, Kenneth C. Racette, James A. Folta, and Cindy C. Larson "Mask Blanks and Their (Sometimes Invisible) Defects", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467481
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Inspection

Quartz

Particles

Chromium

Extreme ultraviolet lithography

Lithography

RELATED CONTENT

EUVL: transition from research to commercialization
Proceedings of SPIE (August 28 2003)
Integration of antireflection coatings on EUV absorber stacks
Proceedings of SPIE (December 27 2002)
Advanced mask particle cleaning solutions
Proceedings of SPIE (October 30 2007)
Selete EUV reticle shipping and storage test results
Proceedings of SPIE (May 19 2008)
Reticle cleaning process for 130-nm lithography and beyond
Proceedings of SPIE (September 05 2001)

Back to Top