Inspectability and lithographic effects of reticle defects under the aggressive OPC environment

Byung Gook Kim; Keishi Tanaka; Nobuyuki Yoshioka; Keiichi Hatta; Masao Otaki

doi:10.1117/12.467902

27 December 2002 Inspectability and Lithographic Effects of Reticle Defects Under Aggressive OPC Environment

Byung Gook Kim, Keishi Tanaka, Nobuyuki Yoshioka, Keiichi Hatta, Masao Otaki

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467902
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Today, many IC manufacturers use OPC (Optical Proximity effect Correction) technique to obtain finer circuit geometries by adding serifs and jogs to conventional binary mask. Moreover, for endless device shrink in the absent of alternative lithography solution, successful below-half-wavelength lithography requires “much stronger OPC” which consisted of complicate patterns generated from the finer grid size of OPC software or many assist patterns to the main patterns. The mask industry, therefore, is now facing significant problems induced by both increasing write time and defect-like-small complicated OPC patterns. It is questionable that current inspection system could detect all the defect-sources as the aggressiveness of OPC is accelerated. It is not everything to detect small defect only. The direction of development of new reticle inspection tool should be directed by a smart strategy under such an aggressive environment. This paper details the lithographic effects under the 193nm wavelength and inspection sensitivity using newly developed DUV inspection system for various defects on OPC reticle. The relationship between lithographic effects and reticle inspection sensitivity was investigated according to the defect type, defect size, defect position and the aggressiveness of OPC. From this study the requirements of next generation inspection system would be clarified to necessitate good OPC mask manufacturing.

Citation Download Citation

Byung Gook Kim, Keishi Tanaka, Nobuyuki Yoshioka, Keiichi Hatta, and Masao Otaki "Inspectability and Lithographic Effects of Reticle Defects Under Aggressive OPC Environment", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467902

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