Electron-beam-induced processes and their applicability to mask repair

Volker A. Boegli; Hans W. P. Koops; Michael Budach; Klaus Edinger; Ottmar Hoinkis; Bernd Weyrauch; Rainer Becker; Rudolf Schmidt; Alexander Kaya; Andreas Reinhardt; Stephan Braeuer; Heinz Honold; Johannes Bihr; Jens Greiser; Michael Eisenmann

doi:10.1117/12.468200

27 December 2002 Electron-beam Induced Processes and their Applicability to Mask Repair

Volker A. Boegli, Hans W. P. Koops, Michael Budach, Klaus Edinger, Ottmar Hoinkis, Bernd Weyrauch, Rainer Becker, Rudolf Schmidt, Alexander Kaya, Andreas Reinhardt, Stephan Braeuer, Heinz Honold, Johannes Bihr, Jens Greiser, Michael Eisenmann

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Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468200
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

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Volker A. Boegli, Hans W. P. Koops, Michael Budach, Klaus Edinger, Ottmar Hoinkis, Bernd Weyrauch, Rainer Becker, Rudolf Schmidt, Alexander Kaya, Andreas Reinhardt, Stephan Braeuer, Heinz Honold, Johannes Bihr, Jens Greiser, and Michael Eisenmann "Electron-beam Induced Processes and their Applicability to Mask Repair", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468200

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