Dark field EUVL mask for 45-nm technology node poly-layer printing

Pei-yang Yan

doi:10.1117/12.468101

27 December 2002 Dark Field EUVL Mask for 45nm Technology Node Poly Layer Printing

Pei-yang Yan

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468101
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

In this study, we found that there are several advantages in extreme ultra-violet lithography (EUVL) by using a dark field mask to print lines. It includes: 1) no Bossung curve tilt and focus shift effect between the dense and isolated space aerial images; 2) small proximity effect as compared to the line aerial images; 3) small flare effect as compared to the clear field mask; 4) mask fabrication requires positive mask space bias, i.e., to size mask spaces larger than the printed target critical dimension (CD) to compensate the mask shadowing effect as apposed to the negative mask line bias (i.e., to size the mask lines smaller than the printed target CD) for the clear field mask. Positive mask bias will relax mask patterning resolution limitation.

Citation Download Citation

Pei-yang Yan "Dark Field EUVL Mask for 45nm Technology Node Poly Layer Printing", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468101

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