Paper
11 November 2002 Radiometric characterization of normal-incidence InAs/In0.15Ga0.85As quantum-dot detectors
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Abstract
Normal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T=78K with λcut-off ~8.2 μm and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 μm, which is attributed to the bound to continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78K yield a peak responsivity of 3.58 A/W (Vb=-1V), peak detectivity= 2.7x109cmHz1/2/W (Vb=-0.3V), conversion efficiency of 57% and a gain ~25.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanjay Krishna, Sunil Raghavan, Andreas Stintz, Christian P. Morath, Hillary E. Norton, Dang T. Le, David A. Cardimona, and Stephen W. Kennerly "Radiometric characterization of normal-incidence InAs/In0.15Ga0.85As quantum-dot detectors", Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); https://doi.org/10.1117/12.453504
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KEYWORDS
Sensors

Gallium arsenide

Gallium

Indium arsenide

Long wavelength infrared

Quantum dots

Staring arrays

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