Silicon nanocrystals microcavity

D. Amans; S. Callard; A. Gagnaire; Jacques Joseph; G. Ledoux; Friedrich Huisken

doi:10.1117/12.452318

5 November 2002 Silicon nanocrystals microcavity

D. Amans, S. Callard, A. Gagnaire, Jacques Joseph, G. Ledoux, Friedrich Huisken

Author Affiliations +

Proceedings Volume 4808, Optical Properties of Nanocrystals; (2002) https://doi.org/10.1117/12.452318
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

We report the fabrication of dielectric mirrors microcavity with silicon nanocrystals layer as the emitting layer. The fabrication process allowed the non degradation of the optical properties of the emettors. By angular-resolved photoluminescence, we investigated changes in angular emission pattern caused by a half cavity and a full cavity. We show that the whole energy emitted in the half cavity vertical cone emission is concentrated in the sharp full cavity vertical cone emission.

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D. Amans, S. Callard, A. Gagnaire, Jacques Joseph, G. Ledoux, and Friedrich Huisken "Silicon nanocrystals microcavity", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); https://doi.org/10.1117/12.452318

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