Photoluminescence in crystalline-Si/Si02 quantum wells

David J. Lockwood; Zheng-Hong Lu; D. Grozea

doi:10.1117/12.452159

5 November 2002 Photoluminescence in crystalline-Si/Si0₂ quantum wells

David J. Lockwood, Zheng-Hong Lu, D. Grozea

Proceedings Volume 4808, Optical Properties of Nanocrystals; (2002) https://doi.org/10.1117/12.452159
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Single nanometer-thick layers of crystalline silicon (c-Si) confined by amporphouse SiO₂ have been prepared from silicon-on-insulator wafers. The photoluminescence from these ultra-thin quantum wells shows an increase in peak energy with decreasing c-Si layer thickness. Comparison with experimental results for the c-Si band gap and also with theory shows that the increase in photoluminescence peak energy is not as rapid as the measured or predicted energy gap. This difference is attributed to recombination of confined electron-hole pairs at the c-Si/SiO₂ interface rather than within the quantum well.

Citation Download Citation

David J. Lockwood, Zheng-Hong Lu, and D. Grozea "Photoluminescence in crystalline-Si/Si0₂ quantum wells", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); https://doi.org/10.1117/12.452159

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