Measurement of the complex index of refraction of semiconductors

Richard R. Zito

doi:10.1117/12.452621

20 November 2002 Measurement of the complex index of refraction of semiconductors

Richard R. Zito

Proceedings Volume 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII; (2002) https://doi.org/10.1117/12.452621
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

A simple method is presented for measuring boththe real and imaginary parts of low resistivity semiconductors. The method depends on making two reflection measurements from a bulk sample of material. One measurement is made at normal incidence and the other at an arbitrary angle of incidence greater than zero, but less than 90°. Only a simple reflectometer is required. The method offers an alterantive to traditional, and more complex Brewster angle measurements or ellipsometry.

Citation Download Citation

Richard R. Zito "Measurement of the complex index of refraction of semiconductors", Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); https://doi.org/10.1117/12.452621

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