Gas Immersion Laser Doping

R. J. Pressley; T. W. Sigmon; T. S. Fahlen

doi:10.1117/12.942578

15 August 1984 Gas Immersion Laser Doping

R. J. Pressley, T. W. Sigmon, T. S. Fahlen

Proceedings Volume 0476, Excimer Lasers: Their Applications & New Frontiers in Lasers; (1984) https://doi.org/10.1117/12.942578
Event: 1984 Technical Symposium East, 1984, Arlington, United States

Abstract

The use of short pulse lasers to dope silicon is discussed. Results of the process when used to fabricate silicon solar cells and p+-n- diode structures are reviewed. The mechanism of doping is discussed and electrical and structural data presented. Successful fabrication of very shallow, high concentration junctions by this technique makes it a viable process for silicon VLSI processing.

Citation Download Citation

R. J. Pressley, T. W. Sigmon, and T. S. Fahlen "Gas Immersion Laser Doping", Proc. SPIE 0476, Excimer Lasers: Their Applications & New Frontiers in Lasers, (15 August 1984); https://doi.org/10.1117/12.942578

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