Systematic investigation of the growth of LaNiO3/PZT/LaNiO3/Si and LaNiO3/PZT/LaNiO3/polymer/Si for IR detector applications

Sang-Ho Yun; Ronald N. Vallejo; Judy Z. Wu; Meimei Z. Tidrow; Howard R. Beratan; Charles M. Hanson

doi:10.1117/12.478835

5 August 2002 Systematic investigation of the growth of LaNiO₃/PZT/LaNiO₃/Si and LaNiO₃/PZT/LaNiO₃/polymer/Si for IR detector applications

Sang-Ho Yun, Ronald N. Vallejo, Judy Z. Wu, Meimei Z. Tidrow, Howard R. Beratan, Charles M. Hanson

Author Affiliations +

Proceedings Volume 4721, Infrared Detectors and Focal Plane Arrays VII; (2002) https://doi.org/10.1117/12.478835
Event: AeroSense 2002, 2002, Orlando, FL, United States

Abstract

We have been focused on growth of multi-layered LaNiO₃/Pb(Zr,Ti)O₃/LaNiO₃ on bare Si and polymer-coated Si substrates for infrared detector applications. A unique ion-beam assisted pulsed laser deposition (IBAD-PLD) has been employed to address two critical issues related to these thin film ferroelectric (TFFE) devices: to reduce the thermal budget and to enhance the texture of the devices. IBAD has been a well-known technique for deposition of thin films due to the ability to control morphology, adhesion, texture, and stoichiometry of the film by providing extra kinetic energies to, and to generate desired textures in films by preferential sputtering of the growing surface of the film. We have studied the role of several processing parameters of IBAD-PLD process, including ion-beam energy, current density, IBAD time, and substrate temperature in order to identify the best processing window for LaNiO₃/Pb(Zr,Ti)O₃/LaNiO₃.

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Sang-Ho Yun, Ronald N. Vallejo, Judy Z. Wu, Meimei Z. Tidrow, Howard R. Beratan, and Charles M. Hanson "Systematic investigation of the growth of LaNiO₃/PZT/LaNiO₃/Si and LaNiO₃/PZT/LaNiO₃/polymer/Si for IR detector applications", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); https://doi.org/10.1117/12.478835

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