Paper
5 August 2002 Improved HgCdTe technology for high-performance infrared detectors
Johann Ziegler, Martin Bruder, Wolfgang A. Cabanski, Heinrich Figgemeier, Marcus Finck, Peter Menger, Thomas Simon, Richard Wollrab
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Abstract
To meet the demands for high performance HgCdTe detectors at high yield and producibility, key processes have been optimized and new approaches have been developed. By a superior CdZnTe Bridgman growth process, dislocation densities <1x105cm-2 in substrate and epitaxial layer are achieved for all substrates, ensuring high performance Focal-Plane-Arrays, particularly for (lambda) CO=11,5 micrometers arrays. A new guard ring approach for planar diodes, created by a n+-region in pixel spacing area reduces pixel crosstalk and improves Modulation Transfer Function. For high thermal cycles of the FPA, the flip-chip- technique has been optimized, leading to >2000 cycles for 640x512-FPA's. Producibility and reliability of AIM's MCT FPA technology are demonstrated.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johann Ziegler, Martin Bruder, Wolfgang A. Cabanski, Heinrich Figgemeier, Marcus Finck, Peter Menger, Thomas Simon, and Richard Wollrab "Improved HgCdTe technology for high-performance infrared detectors", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); https://doi.org/10.1117/12.478853
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Cited by 4 scholarly publications.
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KEYWORDS
Staring arrays

Diodes

Sensors

Mercury cadmium telluride

Standards development

Analog electronics

Etching

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