New methods to calibrate simulation parameters for chemically amplified resists

Bernd Tollkuehn; Andreas Erdmann; Niko Kivel; Stewart A. Robertson; Doris Kang; Steven G. Hansen; Anita Fumar-Pici; Tsann-Bim Chiou; Wolfgang Hoppe

doi:10.1117/12.474497

30 July 2002 New methods to calibrate simulation parameters for chemically amplified resists

Bernd Tollkuehn, Andreas Erdmann, Niko Kivel, Stewart A. Robertson, Doris Kang, Steven G. Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, Wolfgang Hoppe

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474497
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper we examine new models and the indispensability of model parameters of chemically amplified resists (CAR) for their usage in predictive process simulation. Based on a careful exploration of different modeling options we calibrate the model parameters with different experimental data. Furthermore, we investigate different modeling approaches: (1) Mode of coupling between diffusion and kinetic reactions, sequence of quencher base events (Hinsberg model); (2) Mode of diffusion: Fickian and linear diffusion model; (3) Development rate model: Performance of the Enhanced Notch model. The resulting models are evaluated with respect to their performance by comparing with experimental line-width for semidense (1-2, 1-1.6, 1-1.4, 1-1.2) and dense features, the bias between different features and full resist profiles. The investigations are applied to the Shipley resist UV^TM 113. Finally, a parameter extraction procedure for chemically amplified resists is proposed.

Citation Download Citation

Bernd Tollkuehn, Andreas Erdmann, Niko Kivel, Stewart A. Robertson, Doris Kang, Steven G. Hansen, Anita Fumar-Pici, Tsann-Bim Chiou, and Wolfgang Hoppe "New methods to calibrate simulation parameters for chemically amplified resists", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474497

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