Paper
30 July 2002 Enhancements in rigorous simulation of light diffraction from phase-shift masks
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Abstract
With the increasing importance of phase-shift masks (PSM), the rigorous simulation of the light diffraction from the mask becomes a standard technique in lithography simulation. The combination of rigorous simulation of light diffraction with scalar and vector imaging theory results in several possible model options. The paper presents an overview about these model options. A new approach to the modeling of oblique incidence of light on the mask is proposed. The performance of field decomposition techniques for two selected examples is discussed. The different model options are applied to the simulation of the imaging of an alternating PSM with a ArF scanner. Resist simulations are performed with a calibrated model. Simulation results are verified experimentally and presented via resist imaging data for different pitches.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann and Nishrin Kachwala "Enhancements in rigorous simulation of light diffraction from phase-shift masks", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474496
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CITATIONS
Cited by 12 scholarly publications and 19 patents.
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KEYWORDS
Photomasks

Diffraction

Calibration

Lithography

Optical lithography

Scanners

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