Clear-field dual alternating phase-shift mask lithography

Douglas A. Bernard; Jiangwei Li

doi:10.1117/12.474478

30 July 2002 Clear-field dual alternating phase-shift mask lithography

Douglas A. Bernard, Jiangwei Li

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474478
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A new double exposure technique using two alternating phase shift masks (APSMs) is developed for patterning clear field designs at ultra small critical dimensions. It is called Clear Field Dual APSM Lithography. It is based on the hypothesis that phase conflicts can be avoided for both masks if apertures oriented along the vertical direction are assigned to one mask, and those along the horizontal direction to the other. It is expressed as a heuristic mask synthesis strategy in which each mask is imaged at the full exposure dose. The strategy was validated using aerial image simulations of various design configurations. Interesting results were obtained regarding image stitching, tight patterns, design rules, image resonance and its mitigation, and the beneficial properties of phase edges.

Citation Download Citation

Douglas A. Bernard and Jiangwei Li "Clear-field dual alternating phase-shift mask lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474478

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