Paper
24 July 2002 Synergic effect of acetal-based resin by blending with poly[4-hydroxy styrene-co-tert-butyl acrylate-co-4-(3-cyano-1,5-di-tert-butyl carbonyl pentyl styrene)] (P(HS-TBA-CBPS)) on the profiles of 248 nm chemically amplified resist
Hyun-Jin Kim, Yoon-Sik Chung, Dong Hwal Lee, Sook Hee Cho, Kwang Hwyi Im, Yun-Gill Yim, Deog-Bae Kim, Jae-Hyun Kim
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Abstract
We prepared ter-polymer of hydroxystyrene, tert-butyl acrylate and 4-(3-cyano-1,5-di-tert-butyl carbonyl pentyl styrene) (P(HS-TBA-CBPS)) and discussed a characteristic of prepared polymer. As TBA, newly introduced monomer increases, contrast of resist is improved. And the prepared polymer was blended with poly(4-hydroxystyrene-co-4-(1-ethylethoxystyrene)) (EE-PHS). The synergic effect on a resist performance in KrF lithography by the combination of high and low activation energy system was shown. A resist using blending polymer was shown a good performance on resolution and LER(Line Edge Roughness) than resist using polymer separately. Based on the results, it was found that high performance KrF resist could be obtained by optimization of polymer blending.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyun-Jin Kim, Yoon-Sik Chung, Dong Hwal Lee, Sook Hee Cho, Kwang Hwyi Im, Yun-Gill Yim, Deog-Bae Kim, and Jae-Hyun Kim "Synergic effect of acetal-based resin by blending with poly[4-hydroxy styrene-co-tert-butyl acrylate-co-4-(3-cyano-1,5-di-tert-butyl carbonyl pentyl styrene)] (P(HS-TBA-CBPS)) on the profiles of 248 nm chemically amplified resist", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474265
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KEYWORDS
Polymers

Lithography

Line edge roughness

Polymerization

Transmittance

Scanning electron microscopy

Etching

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