Paper
24 July 2002 Performance of vinyl ether cross-linkers on resist for 193-nm lithography
JongSoo Lee, Hideo Suzuki, Keisuke Odoi, Nobukazu Miyagawa, Shigeru Takahara, Tsuguo Yamaoka
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Abstract
A three-component positive working resist composed of an acrylate polymer, vinyl ether cross-linker, and photoacid generator was evaluated for vacuum UV lithography. The vinyl ether cross-linker using tricyclodecyl group of alicyclic compound has a high transparency. This resist system shows a relatively high sensitivity and has a good profiling by irradiation using 193 nm light from an ArF excimer laser. Moreover, we found that these cross-linking type resists have advantages with respect to its resist properties such as the acid diffusion and the dry etching resistance.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JongSoo Lee, Hideo Suzuki, Keisuke Odoi, Nobukazu Miyagawa, Shigeru Takahara, and Tsuguo Yamaoka "Performance of vinyl ether cross-linkers on resist for 193-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474254
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Cited by 12 patents.
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KEYWORDS
Diffusion

Resistance

Polymers

Dry etching

Lithography

Excimer lasers

Absorption

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