Nanostructure patterns for Shipley SPR505A resist using PRIME process

Khalil I. Arshak; Miroslav Mihov; Arousian Arshak; Declan McDonagh; Michael Pomeroy; Simon Newcomb

doi:10.1117/12.474177

24 July 2002 Nanostructure patterns for Shipley SPR505A resist using PRIME process

Khalil I. Arshak, Miroslav Mihov, Arousian Arshak, Declan McDonagh, Michael Pomeroy, Simon Newcomb

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474177
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Top Surface Imaging (TSI) is a well-established technique to improve resolution for optical, ultraviolet (UV) and e-beam lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high resolution single layer lithography system incorporating electron beam exposure, silylation and dry development. In this paper, modeling of nanostructures down to 30nm using PRIME with 0.5micrometers thick Shipley SPR505A resist are presented. The simulated profiles have been found to correlate closely with the published experimental data. Moreover, the liquid-phase silylation process step in PRIME has been experimentally characterised using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry as well as cross-sectional SEM and TEM. The impact of different silylating agents on SPR505A is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50(mu) C/cm² at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using Hexamethylcyclotrisilazane (HMCTS) was found to be the highest (11:1) in comparison with other two silylating agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.

Citation Download Citation

Khalil I. Arshak, Miroslav Mihov, Arousian Arshak, Declan McDonagh, Michael Pomeroy, and Simon Newcomb "Nanostructure patterns for Shipley SPR505A resist using PRIME process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474177

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