Paper
24 July 2002 Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography
Gary N. Taylor, Cheng-Bai Xu, Gary Teng, JoAnne Leonard, Charles R. Szmanda, William Lawrence, Sassan Nur, Kirk W. Brown, Al Stephen
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Abstract
This paper describes characterization and lithographic results for one class of low absorbance fluoropolymers that were developed for use in 157 nm lithography. We discuss basic resist properties such as absorbance, hydrophobicity, thickness, resolution and profile for dense 1:1 and semi- dense 1:1.5-10 L/S features, reflection control and plasma etching resistance as a function of composition. Lithographic results were obtained on two types of substrates, silicon and SiON hardmask anti-reflectant. The results on the anti-reflectant were compared to those obtained from simulations using PROLITH. Some of the conclusions of this investigation are: Lower absorbance resists have higher hydrophobicity and better resolution; Resists with high hydrophobicity have very poor adhesion on SiOn, but have very good adhesion on Si and organic anti-reflectants; Only inorganic anti-reflectants have sufficient absorption to provide very low reflectance in <30nm thick films; 100 nm 1:1 L/S resolution is attained in 205 nm thick resist on Si at a resist absorption of 2.2/micrometers . The profile is tapered due to absorption; Adhesion to SiON has been achieved by polymer modification.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary N. Taylor, Cheng-Bai Xu, Gary Teng, JoAnne Leonard, Charles R. Szmanda, William Lawrence, Sassan Nur, Kirk W. Brown, and Al Stephen "Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474261
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Cited by 2 scholarly publications.
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KEYWORDS
Absorbance

Polymers

Lithography

Etching

Silicon

Absorption

Plasma etching

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