Effects of image contrast and resist types upon line edge roughness (LER)

Mike V. Williamson; Xiaofan Meng; Andrew R. Neureuther

doi:10.1117/12.474235

24 July 2002 Effects of image contrast and resist types upon line edge roughness (LER)

Mike V. Williamson, Xiaofan Meng, Andrew R. Neureuther

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474235
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The effect of aerial image contrast upon line edge roughness (LER) of four different commercial resists-UV210, SEPR-463, Apex-E, and UVII-HS-is examined via scanning electron microscopy (SEM) and atomic force microscopy (AFM). Image contrast is varied by exposing both a detailed foreground pattern and a large open area background pattern on the same wafer location. Contrast varies from 0.37 to 1.0. In the case of UV210, LER measured via AFM is 2.55 nm at 1.0 contrast, 2.16 nm at 0.54 contrast, and 3.6 nm at 0.37. Results from other resists follow this trend, wherein no consistent correlation between LER and aerial image contrast can be drawn. SEM measurements also demonstrate no significant correlation between LER and image contrast in any resist type.

Citation Download Citation

Mike V. Williamson, Xiaofan Meng, and Andrew R. Neureuther "Effects of image contrast and resist types upon line edge roughness (LER)", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474235

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