Contact hole patterning performance of ArF resist for 0.10 um technology node

Jin-Soo Kim; Jae Chang Jung; Keun-Kyu Kong; Geunsu Lee; Sung-Koo Lee; Young-Sun Hwang; Ki-Soo Shin

doi:10.1117/12.474258

24 July 2002 Contact hole patterning performance of ArF resist for 0.10 μm technology node

Jin-Soo Kim, Jae Chang Jung, Keun-Kyu Kong, Geunsu Lee, Sung-Koo Lee, Young-Sun Hwang, Ki-Soo Shin

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474258
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

For the fabrication of IC devices, the patterning of C/H (contact holes) is essential but very difficult in comparison with L/S (lines and spaces). 193nm lithography following KrF lithography is expected to play a main role in 0.1micrometers technology node. However, many lithographers have reported various troubles such as poor profiles, resist shrinkage, and pattern edge roughness due to inherent flaws of ArF resist materials. In this study, we noticed such complex issues relating to patterning C/H and evaluated two resists (acrylate, ROMA), which are promising materials among ArF resists, at the condition of various baking temperatures of the soft bake and the post exposure bake. And then we investigated lithographic capability (resolution limit, exposure latitude, depth of focus, and CD uniformity) at the optimum bake conditions. Besides, the resist flow properties were estimated on both resists, respectively. Throughout experimentals, we were able to observe ArF resist properties for bake conditions and find optimum temperatures to improve several issues occurred on C/H pattern. Thus we directly achieved 0.12~0.10 micrometers C/H and also decade- nanometer C/H by applying the resist flow process.

Citation Download Citation

Jin-Soo Kim, Jae Chang Jung, Keun-Kyu Kong, Geunsu Lee, Sung-Koo Lee, Young-Sun Hwang, and Ki-Soo Shin "Contact hole patterning performance of ArF resist for 0.10 μm technology node", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474258

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available