Active-area shape influence on the dark current of CMOS imagers

Igor Shcherback; Alexander A. Belenky; Orly Yadid-Pecht

doi:10.1117/12.463445

24 April 2002 Active-area shape influence on the dark current of CMOS imagers

Igor Shcherback, Alexander A. Belenky, Orly Yadid-Pecht

Proceedings Volume 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III; (2002) https://doi.org/10.1117/12.463445
Event: Electronic Imaging, 2002, San Jose, California, United States

Abstract

This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 X 256 APS chip fabricated via HP in a standard 0.5 micrometers CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the 'ideal' dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

Citation Download Citation

Igor Shcherback, Alexander A. Belenky, and Orly Yadid-Pecht "Active-area shape influence on the dark current of CMOS imagers", Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); https://doi.org/10.1117/12.463445

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