Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy

C. H. Carter Jr.; W. Maszara; G. A. Rozgonyi; D. K. Sadana

doi:10.1117/12.941356

31 May 1984 Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy

C. H. Carter Jr., W. Maszara, G. A. Rozgonyi, D. K. Sadana

Author Affiliations +

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941356
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Research has been conducted in an attempt to correlate the results obtained by cross-sectional transmission electron microscopy (XTEM) to data obtained by angle lapping/ staining (ALS) or Secco etching of various ion implanted specimens. The results indicate that while the stain nearly always delineates the damage or amorphous/crystalline interface, it cannot distinguish between heavily damaged and amorphous regions. An unexpected result was the delineation of deep bands in the implanted wafers 2 to 11 times the LSS projected implantation range (R_p). These bands were found to occur in both neutral and dopant implants and their depth was found to be a mild function of dose but strong functions of temperature and implant ion mass.

Citation Download Citation

C. H. Carter Jr., W. Maszara, G. A. Rozgonyi, and D. K. Sadana "Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941356

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