Improved strained GaAsP photocathodes

Yuri A. Mamaev; Arsen V. Subashiev; Yuri P. Yashin; Anton N. Ambrajei; Alexander V. Rochansky

doi:10.1117/12.456285

18 February 2002 Improved strained GaAsP photocathodes

Yuri A. Mamaev, Arsen V. Subashiev, Yuri P. Yashin, Anton N. Ambrajei, Alexander V. Rochansky

Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456285
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation

Abstract

The parameters of spin-polarized electron photocathode based on strained layer GaAs_0.95P_0.05/GaAs_0.7P_0.3 structure have been improved on the base of X-ray, Raman and polarized photoluminescence studies of such structure. The polarization maximum value 86% in conjunction with Y equals 0.16% makes such cathodes one of the best no matter where.

Citation Download Citation

Yuri A. Mamaev, Arsen V. Subashiev, Yuri P. Yashin, Anton N. Ambrajei, and Alexander V. Rochansky "Improved strained GaAsP photocathodes", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); https://doi.org/10.1117/12.456285

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