Feshbach resonances in Si-, Ge-, and Sn- negative ion photodetachment

Vadim K. Ivanov; Galina Yu. Kashenock; Constantin V. Lapkin

doi:10.1117/12.456242

18 February 2002 Feshbach resonances in Si^-, Ge^-, and Sn^- negative ion photodetachment

Vadim K. Ivanov, Galina Yu. Kashenock, Constantin V. Lapkin

Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456242
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation

Abstract

A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np³ half-filled shells. The photodetachment cross sections from two outer shells of Si^-, Ge^- and Sn^- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound 'nsnp⁴' states revealed themselves as a very sensitive interference structure in the cross section.

Citation Download Citation

Vadim K. Ivanov, Galina Yu. Kashenock, and Constantin V. Lapkin "Feshbach resonances in Si^-, Ge^-, and Sn^- negative ion photodetachment", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); https://doi.org/10.1117/12.456242

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