Ultrashallow p+ junctions in silicon formed by molecular-beam epitaxy using boron delta doping

Philip E. Thompson; Joe Bennett

doi:10.1117/12.437270

24 July 2002 Ultrashallow p+ junctions in silicon formed by molecular-beam epitaxy using boron delta doping

Philip E. Thompson, Joe Bennett

Proceedings Volume 4608, Nanostructure Science, Metrology, and Technology; (2002) https://doi.org/10.1117/12.437270
Event: Workshop on Nanostructure Science, Metrology, and Technology, 2001, Gaithersburg, MD, United States

Abstract

Ultra-shallow junction layers are required for deep submicron CMOS and quantum devices. Low-temperature (320°C) molecular-beam epitaxy was used to form highly conductive, ultra-shallow layers in silicon using boron delta doping. The as-grown junction depths, determined with secondary ion mass spectrometry, ranged from 7 nm to 18 nm. A minimum resistivity of 3 x 10-4 ?-cm was obtained when the delta-doped layers were spaced 2.5 nm apart. The sheet resistances of the epitaxial layers, plotted as a function of junction depth, followed the theoretical curve for a boxdoped layer having a boron doping concentration equal to the solid solubility limit, 6 x 1020/cm3. Minimal change was detected in either the atomic profiles or the resistivity after a 10 s rapid thermal anneal (RTA) or a 10 min furnace anneal (FA) up to 700°C. The sheet resistances of the as-grown shallow junctions are substantially less than those obtained by ion implantation. Only after the 800 °C FA did the MBE-grown layers degrade to have as large a sheet resistance as the best ion implanted layers.

Citation Download Citation

Philip E. Thompson and Joe Bennett "Ultrashallow p+ junctions in silicon formed by molecular-beam epitaxy using boron delta doping", Proc. SPIE 4608, Nanostructure Science, Metrology, and Technology, (24 July 2002); https://doi.org/10.1117/12.437270

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