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Investigation of the photoinduced processes in pure C60 films and in C60 films doped by Ti or Sn was performed by means of sub-100 fs resolution spectrometer. Excitation by 100 fs laser pulses with photon energy above and below the mobility edge revealed that both charged and neutral components appear during the excitation pulse. At both excitation wavelengths electrons and holes are generated by direct optical excitation and not due to singlet-singlet annihilation. Anions are created with a delay of 10-13 - 10-11 s in a result of electrons capture by C60 molecules. Compared to the pure fullerene this process is faster for Sn-doped and slower for Ti-doped sample. Oxygen uptake in the film is mainly responsible for the observed characteristic features of the relaxation in Ti-doped C60. For Sn-doped C60 the yield of charge carriers photogeneration is noticeably larger than for pure C60. Non-monotonic relaxation, observed in the former case, is explained by the charge exchange between C60 anion and metal.
Sergey V. Chekalin,M. S. Kurdoglyan,Anatoly N. Oraevsky,N. F. Starodubtsev,Arkady P. Yartsev, andVilly Sundstrom
"Femtosecond pump-probe investigation of primary stages of charge carrier generation in pure and Sn- and Ti- doped C60 films", Proc. SPIE 4605, PECS 2001: Photon Echo and Coherent Spectroscopy, (15 November 2001); https://doi.org/10.1117/12.447961
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Sergey V. Chekalin, M. S. Kurdoglyan, Anatoly N. Oraevsky, N. F. Starodubtsev, Arkady P. Yartsev, Villy Sundstrom, "Femtosecond pump-probe investigation of primary stages of charge carrier generation in pure and Sn- and Ti- doped C60 films," Proc. SPIE 4605, PECS 2001: Photon Echo and Coherent Spectroscopy, (15 November 2001); https://doi.org/10.1117/12.447961