Absorption and emission properties of F-center-OH- defect pairs in cesium halides

Chunyang Kong; Y. Ma; M. D. Dong; Wanlu Wang; Kejun Liao; J. Xu

doi:10.1117/12.444711

15 October 2001 Absorption and emission properties of F-center-OH- defect pairs in cesium halides

Chunyang Kong, Y. Ma, M. D. Dong, Wanlu Wang, Kejun Liao, J. Xu

Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444711
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

Based on the single electron Hartree-Fock appropriation and extended-ions method, the optical absorption and emission properties of F-center-OH defect pairs (F_H(OH)) is CsCl, CsBr and CsI were investigated in which a polar effect of F- center electron in excited state was considered. The calculated results show the association of F-center and OH substitution ions on (100) next-nearest-neighbor positions in CsCl, CsBr, and CsI forms a new stable defect F_H(OH). The neighboring OH ion splits the pure F-center absorption band into widely separated F_H(1) and F_H(2) electronic absorption polarized parallel and perpendicular to the pair axis. Moreover, the neighboring OH ion quenched the emission in CsCl, but creates strong emission in CsBr and CsI. The theoretical results were in good agreement with the experimental data. A possible mechanism was presented to explain the emission in CsBr and CsI but quenched in CsCl.

Citation Download Citation

Chunyang Kong, Y. Ma, M. D. Dong, Wanlu Wang, Kejun Liao, and J. Xu "Absorption and emission properties of F-center-OH- defect pairs in cesium halides", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444711

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