Paper
21 November 2001 Micro-machined tunable (Mi-T) VCSEL around 1.3 μm
Ali Benmoussa, Jun Tatebayashi, Jean-Philippe Gouy, Hiroyuki Fujita, Yasuhiko Arakawa
Author Affiliations +
Proceedings Volume 4592, Device and Process Technologies for MEMS and Microelectronics II; (2001) https://doi.org/10.1117/12.448994
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia
Abstract
Using silicon technology, our approach to tunable VCSEL uses a micromachined suspended deformable membrane that also function as the top mirror above the semiconductor cavity by an airgap. Here, we report the design of a microelectromechanical tunable VCSELs whose frequency is centered around 1300nm. Our Mi-T-VCSELs include: - A Quantum Dots (QDs) active region of InAs ((lambda) =1300nm), - An electrically tunable vertical resonant Fabry-Perot cavity, which is formed by an air-gap and a movable membrane suspended over the active component. Our QDs Mi-T VCSEL is based on semiconductor-coupled cavity (SCC) design, where the QDs are located inside a semiconductor cavity with thickness a multiple of (lambda) /2, and an air gap, with thickness an odd multiple of N (lambda) /4, is a part of top mirror. Optical behavior of the Mi-T VCSEL is analyzed by a transfer matrix approach that includes the individual properties of the various layers. We carried out mechanical simulations of the top mirrors structures, in order to design and determine all lateral and vertical dimensions. Tuning was achieved for an applied voltage between 0-30V across the air-gap. The usable range of deflection is ~500nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Benmoussa, Jun Tatebayashi, Jean-Philippe Gouy, Hiroyuki Fujita, and Yasuhiko Arakawa "Micro-machined tunable (Mi-T) VCSEL around 1.3 μm", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); https://doi.org/10.1117/12.448994
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KEYWORDS
Mirrors

Vertical cavity surface emitting lasers

Semiconductors

Reflectivity

Gallium

Silicon

Aluminum

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