Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design

Ruoping Wang; Warren D. Grobman; Alfred J. Reich; Matthew A. Thompson

doi:10.1117/12.458317

11 March 2002 Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design

Ruoping Wang, Warren D. Grobman, Alfred J. Reich, Matthew A. Thompson

Author Affiliations +

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458317
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

In this paper we introduce the concept and design of a novel phase shift mask technology, Polarized Phase Shift Mask (P:PSM). The P:PSM technology utilizes non-interference between orthogonally polarized light sources to avoid undesired destructive interference seen in conventional two-phase shift mask technology. Hence P:PSM solves the well-known 'phase edge' or 'phase conflict' problem. By obviating the 2nd exposure and 2nd mask in current Complementary Phase Shift Mask (C:PSM) technology, this single mask/single exposure technology offers significant advantages towards photolithography process as well as pattern design. We use examples of typical design and process difficulties associated with the C:PSM technology to illustrate the advantages of the P:PSM technology. We present preliminary aerial image simulation results that support the potential of this new reticle technology for enhanced design flexibility. We also propose possible mask structures and manufacturing methods for building a P:PSM.

Citation Download Citation

Ruoping Wang, Warren D. Grobman, Alfred J. Reich, and Matthew A. Thompson "Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458317

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