Characterization Of Semiconductor Silicon Using FT-IR Spectroscopy.

K. Krishnan; R. B. Mundhe

doi:10.1117/12.939291

10 May 1984 Characterization Of Semiconductor Silicon Using FT-IR Spectroscopy.

K. Krishnan, R. B. Mundhe

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939291
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

A number of properties of semiconductor silicon during the various stages of the device manufacturing can be measured by Fourier transform infrared spectroscopy. In this paper, the accurate determination of the interstitial oxygen concentrations including the corrections for the effect of multiple reflections in the silicon wafer will be described. Microscopic mapping of the oxygen distribution from sampling areas of 25 micrometers or less in diameter will also be described. Methods are also outlined for the accurate determination of the phosphorus and boron concentrations in phosphosilicate, borosilicate, and borophosphosilicate glasses on silicon.

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K. Krishnan and R. B. Mundhe "Characterization Of Semiconductor Silicon Using FT-IR Spectroscopy.", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939291

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