Use of a high-dispersion spectrograph for optimized visible and UV Raman measurements on semiconductor materials

Andrew Whitley; Fran Adar; Sophie Morel; Miriam Moreau; Nancy R. Klymko

doi:10.1117/12.447382

31 October 2001 Use of a high-dispersion spectrograph for optimized visible and UV Raman measurements on semiconductor materials

Andrew Whitley, Fran Adar, Sophie Morel, Miriam Moreau, Nancy R. Klymko

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Proceedings Volume 4469, Raman Spectroscopy and Light Scattering Technologies in Materials Science; (2001) https://doi.org/10.1117/12.447382
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Implementation of higher spectral and spatial resolution in dispersive Raman microscopes, including access to a variety of excitation wavelengths, has proven beneficial in the semiconductor industry. UV adaptations accommodate measurement of smaller defects, higher sensitivity to thin films (to the exclusion of the substrate) and access to enhancement conditions for materials such as GaN-based photodiodes and lasers, and diamond. The availability of a high dispersion spectrograph, especially for UV wavelengths, avoids compromising spectral resolution. Examples of successful analysis requiring longer focal length, mirror-based spectrographs are shown; these include stress in silicon-based devices, Raman and PL of InGaN (which provides information on composition) and carbon nanotube studies.

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Andrew Whitley, Fran Adar, Sophie Morel, Miriam Moreau, and Nancy R. Klymko "Use of a high-dispersion spectrograph for optimized visible and UV Raman measurements on semiconductor materials", Proc. SPIE 4469, Raman Spectroscopy and Light Scattering Technologies in Materials Science, (31 October 2001); https://doi.org/10.1117/12.447382

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