Paper
5 December 2001 Near-field optical mapping using cantilevered nanoscopic Schottky diode tips
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Abstract
We report on the application as well as microfabrication process of batch-fabricated optical near-field sensors using cantilevered scanning force microscopy tips. The process includes implementation of a coaxial conductive geometry into a silicon sensor tip, along with electrical connections on the cantilever and chip body. The coaxial guide structure is used as electric lead to a sub-micron Schottky photodetector at the end of the tip, formed at the junction of the protruding silicon core and a recessed aluminum coating. The I-V curves of these sensors are consistent with numerical studies for such constricted geometries. Optical near-field data gathered by this sensor in topography-following mode is presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bjoern Rosner, Toralf Bork, Vivek Agrawal, Pavel Neuzil, and Daniel W. van der Weide "Near-field optical mapping using cantilevered nanoscopic Schottky diode tips", Proc. SPIE 4456, Controlling and Using Light in Nanometric Domains, (5 December 2001); https://doi.org/10.1117/12.449530
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Cited by 1 scholarly publication.
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KEYWORDS
Near field optics

Diodes

Silicon

Sensors

Aluminum

Atomic force microscopy

Near field scanning optical microscopy

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