Synthesis of chalcogenide alloy film by CW and pulse laser radiation for integrated device

S. K. Bhadra; Amitesh Maiti; K. Goswami

doi:10.1117/12.441321

25 September 2001 Synthesis of chalcogenide alloy film by CW and pulse laser radiation for integrated device

S. K. Bhadra, Amitesh Maiti, K. Goswami

Proceedings Volume 4417, Photonics 2000: International Conference on Fiber Optics and Photonics; (2001) https://doi.org/10.1117/12.441321
Event: Photonics 2000: International Conference on Fiber Optics and Photonics, 2001, Calcutta, India

Abstract

Thin films of binary chalcogenide synthesized on quartz and silicon single crystal substrates by CW argon ion laser and pulsed third harmonic of Nd:YAG laser irradiation of separate sandwiched Ge/Se and Sn/Se films. The alloy formation and crystalline states are characterized by observing photomicrographs, scanning electron micrographs, optical absorption and reflection spectra. EDAX measurements manifest near stoichiometric proportion of Sn and Se.

Citation Download Citation

S. K. Bhadra, Amitesh Maiti, and K. Goswami "Synthesis of chalcogenide alloy film by CW and pulse laser radiation for integrated device", Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); https://doi.org/10.1117/12.441321

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