Effects of localization in CdTe-based quantum well structures

M. Godlewski; V. Yu. Ivanov; A. Khachapuridze; R. Narkowicz; M. R. Phillips

doi:10.1117/12.425475

10 April 2001 Effects of localization in CdTe-based quantum well structures

M. Godlewski, V. Yu. Ivanov, A. Khachapuridze, R. Narkowicz, M. R. Phillips

Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425475
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Properties of strongly localized excitons in heterostructures of CdTe/CdMnTe are described. Strong localization effects, which modify properties of excitons, are related to micro- structure characteristics of the sample studied. We demonstrate that at low temperatures excitons in the structure with 68% Mn fraction in the CdMnTe barriers are quasi-zero- dimensional.

Citation Download Citation

M. Godlewski, V. Yu. Ivanov, A. Khachapuridze, R. Narkowicz, and M. R. Phillips "Effects of localization in CdTe-based quantum well structures", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425475

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