Paper
14 September 2001 Magnetic field sensing film (Ni0.81Fe0.19)0.66Cr0.34/Ni0.81Fe0.19
Xiaofei Yang, Zilong Peng, Hongwei Liao, Zuoyi Li
Author Affiliations +
Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440234
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China
Abstract
Anisotropic magnetoresistance (AMR) effect thin film sensor has a very wide prospect in application. In this paper, we studied the structure, the AMR and the size effect of the Permalloy film with (Ni0.81Fe0.19)0.66Cr0.34 layer as buffer layer. The resistance of NiFeCr is larger than that of Ta and has the same face-cubic structure as NiFe, which could depress the current shunting effectively and be benefit to the formation of the well-textured NiFe layer. The measurements of XRD and AFM showed that, the specimens with (Ni0.81Fe0.91)0.66Cr0.34 and Ta buffer have close surface roughness, while the former had more textured structure. (Delta) R/R decreased and the saturation field increased with the reduction of the width of the AMR stripes etched by ion beam. However, the magnetic field sensitivity could still reach 0.16 percent/Oe when the width reduce to 30micrometers , and could correctly respond to an alternative magnetic field.
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Xiaofei Yang, Zilong Peng, Hongwei Liao, and Zuoyi Li "Magnetic field sensing film (Ni0.81Fe0.19)0.66Cr0.34/Ni0.81Fe0.19", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); https://doi.org/10.1117/12.440234
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