Method of localized and low-temperature wafer bonding for microsystem packaging

S.C. Shen; Chengtang Pan; Hwai-Pwu Chou

doi:10.1117/12.425301

30 April 2001 Method of localized and low-temperature wafer bonding for microsystem packaging

S.C. Shen, Chengtang Pan, Hwai-Pwu Chou

Proceedings Volume 4407, MEMS Design, Fabrication, Characterization, and Packaging; (2001) https://doi.org/10.1117/12.425301
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This paper presents a novel approach for bonding technique based on the concept of patternable and low temperature process. This method especially is suitable for the design of microstructure by surface micromachining. By this way, the bonding can be solved. The patternable intermediate of photoresist is applied to conduct wafer-bonding experiment. SU-8 is selected as intermediate layer the thickness of SU-8 not only can be easily controlled, but also can be patterned into any-shape by the technique. Furthermore, this method provides smooth intermediate pad to contact for bonding. The experiment of wafer-to-wafer intermediate bonding was conducted. The preliminary results show that the influences of high temperature, electric field, and void can be avoided. The tensile stress test is shown the bonding strength up to 216 kg/cm² can be reached.

Citation Download Citation

S.C. Shen, Chengtang Pan, and Hwai-Pwu Chou "Method of localized and low-temperature wafer bonding for microsystem packaging", Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); https://doi.org/10.1117/12.425301

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