High-pressure treatment and analysis of semiconductor-metal heterophase structures

Vladimir V. Shchennikov; Andrew Yu. Derevskov; Vladimir I. Osotov; Sergey V. Ovsyannikov

doi:10.1117/12.425250

20 April 2001 High-pressure treatment and analysis of semiconductor-metal heterophase structures

Vladimir V. Shchennikov, Andrew Yu. Derevskov, Vladimir I. Osotov, Sergey V. Ovsyannikov

Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425250
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

New results of high pressure investigations of semiconductor compounds PbX (X-S, Se, Te) and novel data of thermoelectric power S of high pressure phases are presented. In vicinity of metal-semiconductor phase transformations at high pressure P above approximately 2.5, 4.5 and 6.5 GPa, respectively, where samples became a mixture of phase inclusions, disproportional variations of electrical resistance and S were observed. Analysis of properties changing was made by using of oriented inclusions model with variable phase configuration. The using of high pressure set up with sintered diamond plungers made it possible to investigate as electronic and also configuration parameters of phases for heterophase systems at high pressures.

Citation Download Citation

Vladimir V. Shchennikov, Andrew Yu. Derevskov, Vladimir I. Osotov, and Sergey V. Ovsyannikov "High-pressure treatment and analysis of semiconductor-metal heterophase structures", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425250

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