Paper
7 September 2001 Highly transmissive ion implanted germanium windows
Bradley D. Schwartz, Joel Askinazi, Richard R. Poole
Author Affiliations +
Abstract
Ion implantation and diffusion have been used to create conductive layers in germanium windows while maintaining high LWIR transmission. We have reduced the sheet resistance to below 5 ohms/square while limiting transmission losses to less than 9% in the 8-12 micron range.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bradley D. Schwartz, Joel Askinazi, and Richard R. Poole "Highly transmissive ion implanted germanium windows", Proc. SPIE 4375, Window and Dome Technologies and Materials VII, (7 September 2001); https://doi.org/10.1117/12.439164
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KEYWORDS
Antimony

Germanium

Resistance

Ions

Crystals

Absorption

Semiconducting wafers

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