MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge

Leonid G. Mansurov; Volodymyr Kavych; Mariya Lozynska; Alexey V. Nemolovsky; Igor S. Virt

doi:10.1117/12.417798

22 February 2001 MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge

Leonid G. Mansurov, Volodymyr Kavych, Mariya Lozynska, Alexey V. Nemolovsky, Igor S. Virt

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417798
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The structure of Mn_xHg_1-xTe thin layers with x equals 0.12 - 0.19 deposited on CdTe substrates with (111) and (110) orientations has been investigated. The glow radio-frequency (RF) (f equals 13.56 MHz) discharge was excited according to the diode scheme in magnetic field. The process was carried out under Hg vapor pressure from 5 (DOT) 10^-3 to 8 (DOT) 10^-3 Torr with quasiclosed volume. The possibility of Hg vapor pressure regulation allowed to carry out reactive process of MnHgTe layers condensation. It has been shown, that RF sputtering of MnHgTe in mercury glow discharge permits to obtain epitaxial layers with perfect structure. Optimal values of substrate temperatures which lead to epitaxial growth are from 230 to 250 degrees Celsius. The carrier concentrations and their mobilities have been determined.

Citation Download Citation

Leonid G. Mansurov, Volodymyr Kavych, Mariya Lozynska, Alexey V. Nemolovsky, and Igor S. Virt "MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417798

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