Paper
12 March 2001 Synthesis of dispersion-controlled mirror based on the semiconductor materials for near-IR femtosecond lasers
N. D. Goldina, Efim V. Pestryakov, V. I. Trunov
Author Affiliations +
Abstract
It has been proposed the design of mirrors for near IR femtosecond lasers with given pulse characteristics based on the III-V compound semiconductors using MBE-technologies with reproducible phase parameter due to precise control of the layer parameters. The designed structure of two-part multilayer mirror includes the bottom part with a great number of AlGaAs-pairs and the top several antireflection layers. The specified negative near-constant group delay dispersion can be realized at certain band of spectrum.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. D. Goldina, Efim V. Pestryakov, and V. I. Trunov "Synthesis of dispersion-controlled mirror based on the semiconductor materials for near-IR femtosecond lasers", Proc. SPIE 4352, Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields, (12 March 2001); https://doi.org/10.1117/12.418809
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KEYWORDS
Mirrors

Femtosecond phenomena

Reflection

Semiconductors

Coating

Compound semiconductors

Semiconductor materials

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