Paper
9 April 2001 Improvement of temperature uniformity during prebake process in mask blank production
Bernd Beier, Fredi Schubert, Ute Buttgereit, Andreas Bensberg
Author Affiliations +
Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425078
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
The development in microlithography is focused on realization of feature sizes below 0.18 micrometers . This requires the reduction of defect size and density as well as the enhancement of CD performance. In blank production the CD uniformity is mainly influenced by resist thickness uniformity and temperature uniformity during prebake. This poster evaluates the impact of prebake process on CD performance. Best CD values are 10 nm range presently. Looking on the bake process of ZEP7000 at 200 degree(s)C a temperature difference of 1 K leads to a CD variation of 3.5 nm up to 7.9 nm. The work investigates the influence of an open and a semi open hotplate configuration on the blank surface temperature distribution during prebake process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernd Beier, Fredi Schubert, Ute Buttgereit, and Andreas Bensberg "Improvement of temperature uniformity during prebake process in mask blank production", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425078
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KEYWORDS
Critical dimension metrology

Convection

Infrared cameras

Photomasks

Semiconducting wafers

Silicon

Aluminum

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