High-frequency method of SiC plate crystals characterization

Anatoly V. Shturbin; Ilya E. Titkov; Vadim Yu. Panevin; Renata F. Witman

doi:10.1117/12.417637

1 February 2001 High-frequency method of SiC plate crystals characterization

Anatoly V. Shturbin, Ilya E. Titkov, Vadim Yu. Panevin, Renata F. Witman

Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417637
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation

Abstract

In this paper we present a simple non-destructive method for testing SiC plate single-crystals of any size and shape. The method is based on measuring the impedance changes of an inductive ferrite-cored coil due to placing the sample into the core gap. The method is valid for any SiC polytypes, though we used 6H one. Using this method we have obtained and discussed a conductivity as a function of doping level (N_d-N_a) for 6H-SiC Lely crystals. The conductivity measurements were carried out with alternating current of 747 kHz frequency. The sensitivity of the method is limited by minimal conductivity 1 (Ohm(DOT)cm)^-1 (that is corresponding to (N_d-N_a) approximately 2 (DOT) 10¹⁶ cm^-3 for 6H-SiC:N Lely crystals).

Citation Download Citation

Anatoly V. Shturbin, Ilya E. Titkov, Vadim Yu. Panevin, and Renata F. Witman "High-frequency method of SiC plate crystals characterization", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417637

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