Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication

David Ruede; Monique Ercken; Tom Borgers

doi:10.1117/12.435635

14 September 2001 Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication

David Ruede, Monique Ercken, Tom Borgers

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435635
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The issues surrounding the sensitivity of chemically amplified DUV photoresists to molecular bases such as ammonia, NMP, TMA and related compounds, have been the sources of intensive study and numerous publications. The challenges of DUV lithography tested both the photoresist suppliers' abilities to improve resistance to chemical degradation and the equipment suppliers' abilities to control molecular bases in the wafer processing environment. The efforts of photoresist suppliers have resulted in the latest generation of resists, some of which are reported to be less sensitive to molecular base exposure. Concurrently, powerful chemical filters have been developed to be able to maintain process equipment enclosures below concentrations of one part per billion (volume) through a wide range of ambient challenge conditions.

Citation Download Citation

David Ruede, Monique Ercken, and Tom Borgers "Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435635

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