Optical properties of Pb1-xSnxSe<In> epitaxial films

Eldar Yu. Salaev; H. R. Nuriyev; Kh. D. Jalilova; N. V. Faradjev

doi:10.1117/12.407733

28 November 2000 Optical properties of Pb_1-xSn_xSe(In) epitaxial films

Eldar Yu. Salaev, H. R. Nuriyev, Kh. D. Jalilova, N. V. Faradjev

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407733
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

The optical absorption edge on the indium-doped (N_In less than or equal to 0,8 weight%) Pb_1-xSn_xSe(X=0.07) epitaxial layers have been investigated. The observed movement of intrinsic absorption edge in the short-wave length region spectrum is interpreted by the presence of indium impurity, which lead to some increasing of the gap width E_g in Pb_1-xSn_xSe. It has been found, that the inter-zone absorption edge in the weak absorption region Pb_1-xSn_xSe(In) is conditioned by nondirect optic transitions. The magnitudes of E_g and E_g/dT have been calculated and are described by (square root)K=f(E) curve.

Citation Download Citation

Eldar Yu. Salaev, H. R. Nuriyev, Kh. D. Jalilova, and N. V. Faradjev "Optical properties of Pb_1-xSn_xSe(In) epitaxial films", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407733

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