Paper
28 November 2000 Material aspects of OEIC development based on A2B6 compounds on silicone and sapphire
Oleg N. Ermakov, Valery N. Martynov, Alexey E. Ashomko
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407739
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
General trends and different technological approaches to modern optoelectronic integrated circuits (OEICs) development and fabrication are considered. It is emphasized that from point of view multifunctional OEICs realization direct gap semiconductor materials both A3B5 and A2B6 are primarily desirable. Data are presented for optical, luminescent and photoelectric properties of several A2B6 compounds, including CdS, CdSe, CdSSe, CdTe. Material aspects are discussed imposing technological limitations for A2B6 compounds utilization in OEICs development and fabrication.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg N. Ermakov, Valery N. Martynov, and Alexey E. Ashomko "Material aspects of OEIC development based on A2B6 compounds on silicone and sapphire", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407739
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KEYWORDS
Photonic integrated circuits

Silicon

Cadmium sulfide

Electroluminescence

Nitrogen

Sapphire

Integrated optics

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